Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 10(14) cm(−2...

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Detalles Bibliográficos
Autores principales: Sun, Shuxiang, Ding, Peng, Jin, Zhi, Zhong, Yinghui, Li, Yuxiao, Wei, Zhichao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669653/
https://www.ncbi.nlm.nih.gov/pubmed/31266260
http://dx.doi.org/10.3390/nano9070967

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669653/
https://www.ncbi.nlm.nih.gov/pubmed/31266260
http://dx.doi.org/10.3390/nano9070967

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