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Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated comprehensively. The devices were exposed to a 1 MeV electron beam with varied irradiation fluences from 1 × 10(14) cm(−2...

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Detalles Bibliográficos
Autores principales:	Sun, Shuxiang, Ding, Peng, Jin, Zhi, Zhong, Yinghui, Li, Yuxiao, Wei, Zhichao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669653/ https://www.ncbi.nlm.nih.gov/pubmed/31266260 http://dx.doi.org/10.3390/nano9070967

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