ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds...

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Detalles Bibliográficos
Autores principales: Kia, Alireza M., Haufe, Nora, Esmaeili, Sajjad, Mart, Clemens, Utriainen, Mikko, Puurunen, Riikka L., Weinreich, Wenke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669757/
https://www.ncbi.nlm.nih.gov/pubmed/31331020
http://dx.doi.org/10.3390/nano9071035

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669757/
https://www.ncbi.nlm.nih.gov/pubmed/31331020
http://dx.doi.org/10.3390/nano9071035

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