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ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds...

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Autores principales: Kia, Alireza M., Haufe, Nora, Esmaeili, Sajjad, Mart, Clemens, Utriainen, Mikko, Puurunen, Riikka L., Weinreich, Wenke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669757/
https://www.ncbi.nlm.nih.gov/pubmed/31331020
http://dx.doi.org/10.3390/nano9071035
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author Kia, Alireza M.
Haufe, Nora
Esmaeili, Sajjad
Mart, Clemens
Utriainen, Mikko
Puurunen, Riikka L.
Weinreich, Wenke
author_facet Kia, Alireza M.
Haufe, Nora
Esmaeili, Sajjad
Mart, Clemens
Utriainen, Mikko
Puurunen, Riikka L.
Weinreich, Wenke
author_sort Kia, Alireza M.
collection PubMed
description For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO(2) thin films.
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spelling pubmed-66697572019-08-08 ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition Kia, Alireza M. Haufe, Nora Esmaeili, Sajjad Mart, Clemens Utriainen, Mikko Puurunen, Riikka L. Weinreich, Wenke Nanomaterials (Basel) Article For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO(2) thin films. MDPI 2019-07-19 /pmc/articles/PMC6669757/ /pubmed/31331020 http://dx.doi.org/10.3390/nano9071035 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kia, Alireza M.
Haufe, Nora
Esmaeili, Sajjad
Mart, Clemens
Utriainen, Mikko
Puurunen, Riikka L.
Weinreich, Wenke
ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition
title ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition
title_full ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition
title_fullStr ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition
title_full_unstemmed ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition
title_short ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition
title_sort tof-sims 3d analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6669757/
https://www.ncbi.nlm.nih.gov/pubmed/31331020
http://dx.doi.org/10.3390/nano9071035
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