Nearly perfect near-infrared luminescence efficiency of Si nanocrystals: A comprehensive quantum yield study employing the Purcell effect

Thin layers of silicon nanocrystals (SiNC) in oxide matrix with optimized parameters are fabricated by the plasma-enhanced chemical vapor deposition. These materials with SiNC sizes of about 4.5 nm and the SiO(2) barrier thickness of 3 nm reveal external quantum yield (QY) close to 50% which is near...

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Detalles Bibliográficos
Autores principales: Valenta, J., Greben, M., Dyakov, S. A., Gippius, N. A., Hiller, D., Gutsch, S., Zacharias, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6677743/
https://www.ncbi.nlm.nih.gov/pubmed/31375730
http://dx.doi.org/10.1038/s41598-019-47825-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6677743/
https://www.ncbi.nlm.nih.gov/pubmed/31375730
http://dx.doi.org/10.1038/s41598-019-47825-x

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