Electrical Properties of Low-Temperature Processed Sn-Doped In(2)O(3) Thin Films: The Role of Microstructure and Oxygen Content and the Potential of Defect Modulation Doping

Low-temperature-processed ITO thin films offer the potential of overcoming the doping limit by suppressing the equilibrium of compensating oxygen interstitial defects. To elucidate this potential, electrical properties of Sn-doped In [Formula: see text] O [Formula: see text] (ITO) thin films are stu...

Descripción completa

Detalles Bibliográficos
Autores principales: Deyu, Getnet Kacha, Hunka, Jonas, Roussel, Hervé, Brötz, Joachim, Bellet, Daniel, Klein, Andreas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6678076/
https://www.ncbi.nlm.nih.gov/pubmed/31373290
http://dx.doi.org/10.3390/ma12142232

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6678076/
https://www.ncbi.nlm.nih.gov/pubmed/31373290
http://dx.doi.org/10.3390/ma12142232

Ejemplares similares