Optimizing the Properties of InGaZnO(x) Thin Film Transistors by Adjusting the Adsorbed Degree of Cs(+) Ions

To improve the performance of amorphous InGaZnO(x) (a-IGZO) thin film transistors (TFTs), in this thesis, Cs(+) ions adsorbed IGZO (Cs-IGZO) films were prepared through a solution immersion method at low temperature. Under the modification of surface structure and oxygen vacancies concentrations of...

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Detalles Bibliográficos
Autores principales: Zhang, He, Wang, Yaogong, Wang, Ruozheng, Zhang, Xiaoning, Liu, Chunliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6678316/
https://www.ncbi.nlm.nih.gov/pubmed/31323839
http://dx.doi.org/10.3390/ma12142300

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6678316/
https://www.ncbi.nlm.nih.gov/pubmed/31323839
http://dx.doi.org/10.3390/ma12142300

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