Band to Band Tunneling at the Zinc Oxide (ZnO) and Lead Selenide (PbSe) Quantum Dot Contact; Interfacial Charge Transfer at a ZnO/PbSe/ZnO Probe Device

We provide a comprehensive understanding of interfacial charge transfer at the lead selenide (PbSe) quantum dot (QD)/zinc oxide (ZnO) interface, proposing band to band tunneling process as a charge transfer mechanism in which initial hopping of carriers from ZnO to PbSe QDs is independent of tempera...

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Detalles Bibliográficos
Autores principales: Kim, Minkyong, Han, Chang-Yeol, Yang, Heesun, Park, Byoungnam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6678409/
https://www.ncbi.nlm.nih.gov/pubmed/31319559
http://dx.doi.org/10.3390/ma12142289

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6678409/
https://www.ncbi.nlm.nih.gov/pubmed/31319559
http://dx.doi.org/10.3390/ma12142289

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