Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design (TCAD) Sentaurus and advanced design system (ADS...

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Detalles Bibliográficos
Autores principales: Zhu, Shunwei, Jia, Hujun, Li, Tao, Tong, Yibo, Liang, Yuan, Wang, Xingyu, Zeng, Tonghui, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680630/
https://www.ncbi.nlm.nih.gov/pubmed/31269635
http://dx.doi.org/10.3390/mi10070444

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680630/
https://www.ncbi.nlm.nih.gov/pubmed/31269635
http://dx.doi.org/10.3390/mi10070444

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