Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and Morphology

This paper presents a detection method for characterizing the bonded interface of O(2) plasma activated silicon wafer direct bonding. The images, obtained by infrared imaging system, were analyzed by the software based on spatial domain and morphology methods. The spatial domain processing methods,...

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Detalles Bibliográficos
Autores principales: Du, Mao, Li, Dongling, Liu, Yufei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680715/
https://www.ncbi.nlm.nih.gov/pubmed/31269705
http://dx.doi.org/10.3390/mi10070445

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680715/
https://www.ncbi.nlm.nih.gov/pubmed/31269705
http://dx.doi.org/10.3390/mi10070445

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