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Investigation of Plasma Activated Si-Si Bonded Interface by Infrared Image Based on Combination of Spatial Domain and Morphology
This paper presents a detection method for characterizing the bonded interface of O(2) plasma activated silicon wafer direct bonding. The images, obtained by infrared imaging system, were analyzed by the software based on spatial domain and morphology methods. The spatial domain processing methods,...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680715/ https://www.ncbi.nlm.nih.gov/pubmed/31269705 http://dx.doi.org/10.3390/mi10070445 |