Investigation of 1200 V SiC MOSFETs’ Surge Reliability

In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) from various manufactures has been investigated in the reverse conduction mode. The surge current tests have been carried out in the channel conduction and non-conduction modes. The experim...

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Detalles Bibliográficos
Autores principales: Li, Huan, Wang, Jue, Ren, Na, Xu, Hongyi, Sheng, Kuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680762/
https://www.ncbi.nlm.nih.gov/pubmed/31323884
http://dx.doi.org/10.3390/mi10070485

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680762/
https://www.ncbi.nlm.nih.gov/pubmed/31323884
http://dx.doi.org/10.3390/mi10070485

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