Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

Multi-level cell (MLC) phase change memory (PCM) can not only effectively multiply the memory capacity while maintaining the cell area, but also has infinite potential in the application of the artificial neural network. The write and verify scheme is usually adopted to reduce the impact of device-t...

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Detalles Bibliográficos
Autores principales: Xie, Chenchen, Li, Xi, Chen, Houpeng, Li, Yang, Liu, Yuanguang, Wang, Qian, Ren, Kun, Song, Zhitang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680789/
https://www.ncbi.nlm.nih.gov/pubmed/31288410
http://dx.doi.org/10.3390/mi10070461

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6680789/
https://www.ncbi.nlm.nih.gov/pubmed/31288410
http://dx.doi.org/10.3390/mi10070461

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