Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment

[Image: see text] In the current work, a detailed exploration on the cleaning effect of intrinsic oxide existing at the GaAs/HfYO interface by using an atomic-layer-deposition-derived trimethylaluminum (ALD TMA) precursor as functions of TMA pulse cycles and postannealing temperature has been evalua...

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Detalles Bibliográficos
Autores principales: Liang, Shuang, He, Gang, Wang, Die, Hao, Lin, Zhang, Miao, Cui, Jingbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6682032/
https://www.ncbi.nlm.nih.gov/pubmed/31460273
http://dx.doi.org/10.1021/acsomega.9b01358

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6682032/
https://www.ncbi.nlm.nih.gov/pubmed/31460273
http://dx.doi.org/10.1021/acsomega.9b01358

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