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Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment

[Image: see text] In the current work, a detailed exploration on the cleaning effect of intrinsic oxide existing at the GaAs/HfYO interface by using an atomic-layer-deposition-derived trimethylaluminum (ALD TMA) precursor as functions of TMA pulse cycles and postannealing temperature has been evalua...

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Detalles Bibliográficos
Autores principales:	Liang, Shuang, He, Gang, Wang, Die, Hao, Lin, Zhang, Miao, Cui, Jingbiao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2019
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6682032/ https://www.ncbi.nlm.nih.gov/pubmed/31460273 http://dx.doi.org/10.1021/acsomega.9b01358

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