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Fast Semiconductor–Metal Bidirectional Transition by Flame Chemical Vapor Deposition
[Image: see text] A simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2019
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6682083/ https://www.ncbi.nlm.nih.gov/pubmed/31460291 http://dx.doi.org/10.1021/acsomega.9b01112 |
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author | Choi, Myung Sik Na, Han Gil Bang, Jae Hoon Oum, Wansik Choi, Sun-Woo Kim, Sang Sub Kim, Hyoun Woo Jin, Changhyun |
author_facet | Choi, Myung Sik Na, Han Gil Bang, Jae Hoon Oum, Wansik Choi, Sun-Woo Kim, Sang Sub Kim, Hyoun Woo Jin, Changhyun |
author_sort | Choi, Myung Sik |
collection | PubMed |
description | [Image: see text] A simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature and atmospheric pressure as per the requirement. Since the heat energy is directly transferred to the material surface, the redox periodically converges to the energy dynamic equilibrium depending on the energy injection time; therefore, bidirectional transition between the semiconductor/metal is optionally available. To demonstrate this, a variety of Sn-based particles were created on preformed SnO(2) nanowires, and this has been interpreted as a new mechanism for the response and response times of gas-sensing, which are representative indicators of the most surface-sensitive applications and show one-to-one correspondence between theoretical and experimental results. The detailed technologies derived herein are clearly influential in both research and industry. |
format | Online Article Text |
id | pubmed-6682083 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-66820832019-08-27 Fast Semiconductor–Metal Bidirectional Transition by Flame Chemical Vapor Deposition Choi, Myung Sik Na, Han Gil Bang, Jae Hoon Oum, Wansik Choi, Sun-Woo Kim, Sang Sub Kim, Hyoun Woo Jin, Changhyun ACS Omega [Image: see text] A simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature and atmospheric pressure as per the requirement. Since the heat energy is directly transferred to the material surface, the redox periodically converges to the energy dynamic equilibrium depending on the energy injection time; therefore, bidirectional transition between the semiconductor/metal is optionally available. To demonstrate this, a variety of Sn-based particles were created on preformed SnO(2) nanowires, and this has been interpreted as a new mechanism for the response and response times of gas-sensing, which are representative indicators of the most surface-sensitive applications and show one-to-one correspondence between theoretical and experimental results. The detailed technologies derived herein are clearly influential in both research and industry. American Chemical Society 2019-07-09 /pmc/articles/PMC6682083/ /pubmed/31460291 http://dx.doi.org/10.1021/acsomega.9b01112 Text en Copyright © 2019 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Choi, Myung Sik Na, Han Gil Bang, Jae Hoon Oum, Wansik Choi, Sun-Woo Kim, Sang Sub Kim, Hyoun Woo Jin, Changhyun Fast Semiconductor–Metal Bidirectional Transition by Flame Chemical Vapor Deposition |
title | Fast Semiconductor–Metal Bidirectional Transition
by Flame Chemical Vapor Deposition |
title_full | Fast Semiconductor–Metal Bidirectional Transition
by Flame Chemical Vapor Deposition |
title_fullStr | Fast Semiconductor–Metal Bidirectional Transition
by Flame Chemical Vapor Deposition |
title_full_unstemmed | Fast Semiconductor–Metal Bidirectional Transition
by Flame Chemical Vapor Deposition |
title_short | Fast Semiconductor–Metal Bidirectional Transition
by Flame Chemical Vapor Deposition |
title_sort | fast semiconductor–metal bidirectional transition
by flame chemical vapor deposition |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6682083/ https://www.ncbi.nlm.nih.gov/pubmed/31460291 http://dx.doi.org/10.1021/acsomega.9b01112 |
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