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High mobility Si(0.15)Ge(0.85) growth by using the molten target sputtering (MTS) within heteroepitaxy framework
High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si(0.15) Ge(0.85) film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6689090/ https://www.ncbi.nlm.nih.gov/pubmed/31399626 http://dx.doi.org/10.1038/s41598-019-47723-2 |