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High mobility Si(0.15)Ge(0.85) growth by using the molten target sputtering (MTS) within heteroepitaxy framework

High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si(0.15) Ge(0.85) film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890...

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Detalles Bibliográficos
Autor principal:	Kim, Hyun Jung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6689090/ https://www.ncbi.nlm.nih.gov/pubmed/31399626 http://dx.doi.org/10.1038/s41598-019-47723-2

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