Quick Optical Identification of the Defect Formation in Monolayer WSe(2) for Growth Optimization

Bottom-up epitaxy has been widely applied for transition metal dichalcogenides (TMDCs) growth. However, this method usually leads to a high density of defects in the crystal, which limits its optoelectronic performance. Here, we show the effect of growth temperature on the defect formation, optical...

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Detalles Bibliográficos
Autores principales: Fang, Long, Chen, Haitao, Yuan, Xiaoming, Huang, Han, Chen, Gen, Li, Lin, Ding, Junnan, He, Jun, Tao, Shaohua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6692796/
https://www.ncbi.nlm.nih.gov/pubmed/31414230
http://dx.doi.org/10.1186/s11671-019-3110-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6692796/
https://www.ncbi.nlm.nih.gov/pubmed/31414230
http://dx.doi.org/10.1186/s11671-019-3110-z

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