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Quick Optical Identification of the Defect Formation in Monolayer WSe(2) for Growth Optimization
Bottom-up epitaxy has been widely applied for transition metal dichalcogenides (TMDCs) growth. However, this method usually leads to a high density of defects in the crystal, which limits its optoelectronic performance. Here, we show the effect of growth temperature on the defect formation, optical...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6692796/ https://www.ncbi.nlm.nih.gov/pubmed/31414230 http://dx.doi.org/10.1186/s11671-019-3110-z |