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Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
The Al-doped effects on the band offsets of ZnO/β-Ga(2)O(3) interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an alm...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6694324/ https://www.ncbi.nlm.nih.gov/pubmed/31414235 http://dx.doi.org/10.1186/s11671-019-3092-x |