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Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions

The Al-doped effects on the band offsets of ZnO/β-Ga(2)O(3) interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an alm...

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Autores principales: Sun, Shun-Ming, Liu, Wen-Jun, Golosov, Dmitriy Anatolyevich, Gu, Chen-Jie, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6694324/
https://www.ncbi.nlm.nih.gov/pubmed/31414235
http://dx.doi.org/10.1186/s11671-019-3092-x
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author Sun, Shun-Ming
Liu, Wen-Jun
Golosov, Dmitriy Anatolyevich
Gu, Chen-Jie
Ding, Shi-Jin
author_facet Sun, Shun-Ming
Liu, Wen-Jun
Golosov, Dmitriy Anatolyevich
Gu, Chen-Jie
Ding, Shi-Jin
author_sort Sun, Shun-Ming
collection PubMed
description The Al-doped effects on the band offsets of ZnO/β-Ga(2)O(3) interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga(2)O(3) heterojunction and the AZO/β-Ga(2)O(3) interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level.
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spelling pubmed-66943242019-08-28 Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions Sun, Shun-Ming Liu, Wen-Jun Golosov, Dmitriy Anatolyevich Gu, Chen-Jie Ding, Shi-Jin Nanoscale Res Lett Nano Express The Al-doped effects on the band offsets of ZnO/β-Ga(2)O(3) interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga(2)O(3) heterojunction and the AZO/β-Ga(2)O(3) interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level. Springer US 2019-08-14 /pmc/articles/PMC6694324/ /pubmed/31414235 http://dx.doi.org/10.1186/s11671-019-3092-x Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Sun, Shun-Ming
Liu, Wen-Jun
Golosov, Dmitriy Anatolyevich
Gu, Chen-Jie
Ding, Shi-Jin
Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
title Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
title_full Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
title_fullStr Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
title_full_unstemmed Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
title_short Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions
title_sort investigation of energy band at atomic layer deposited azo/β-ga(2)o(3) ([formula: see text] ) heterojunctions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6694324/
https://www.ncbi.nlm.nih.gov/pubmed/31414235
http://dx.doi.org/10.1186/s11671-019-3092-x
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