Cargando…

Investigation of energy band at atomic layer deposited AZO/β-Ga(2)O(3) ([Formula: see text] ) heterojunctions

The Al-doped effects on the band offsets of ZnO/β-Ga(2)O(3) interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to − 0.42 eV, exhibiting an alm...

Descripción completa

Detalles Bibliográficos
Autores principales:	Sun, Shun-Ming, Liu, Wen-Jun, Golosov, Dmitriy Anatolyevich, Gu, Chen-Jie, Ding, Shi-Jin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2019
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6694324/ https://www.ncbi.nlm.nih.gov/pubmed/31414235 http://dx.doi.org/10.1186/s11671-019-3092-x

Ejemplares similares

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga(2)O(3) ([Formula: see text] ) Heterojunctions
por: Sun, Shun-Ming, et al.
Publicado: (2018)

Investigation of Band Alignment for Hybrid 2D-MoS(2)/3D-β-Ga(2)O(3) Heterojunctions with Nitridation
por: Huan, Ya-Wei, et al.
Publicado: (2019)

Diameter Tuning of [Formula: see text] -Ga(2)O(3) Nanowires Using Chemical Vapor Deposition Technique
por: Kumar, Mukesh, et al.
Publicado: (2017)

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
por: Li, Huijin, et al.
Publicado: (2017)

The heterojunction effects of TiO(2 )nanotubes fabricated by atomic layer deposition on photocarrier transportation direction
por: Chang, Yung-Huang, et al.
Publicado: (2012)

Wafer-Scale Fabrication of Sub-10 nm TiO(2)-Ga(2)O(3)n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition
por: Xu, Hongyan, et al.
Publicado: (2019)

Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study
por: Pi, Tun-Wen, et al.
Publicado: (2013)

Resistive phase transition of the superconducting Si(111)-([Formula: see text])-In surface
por: Uchihashi, Takashi, et al.
Publicado: (2013)

Band Offset Measurements in Atomic-Layer-Deposited Al(2)O(3)/Zn(0.8)Al(0.2)O Heterojunction Studied by X-ray Photoelectron Spectroscopy
por: Yan, Baojun, et al.
Publicado: (2017)

Silicon Nanowire Heterojunction Solar Cells with an Al(2)O(3) Passivation Film Fabricated by Atomic Layer Deposition
por: Kato, Shinya, et al.
Publicado: (2019)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
por: Wu, Yao, et al.
Publicado: (2018)

Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
por: Kim, Hogyoung, et al.
Publicado: (2018)

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors
por: Zhao, Sheng-Xun, et al.
Publicado: (2016)

Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition
por: Ai, Zhi Wei, et al.
Publicado: (2013)

Large Lateral Photovoltaic Effect in MoS(2)/GaAs Heterojunction
por: Hao, Lanzhong, et al.
Publicado: (2017)

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
por: Shih, Huan-Yu, et al.
Publicado: (2016)

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
por: Yang, Lifeng, et al.
Publicado: (2017)

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
por: Tzou, An-Jye, et al.
Publicado: (2017)

The Design of the AZO Conductive Layer on Microchannel Plate
por: Wang, Yuman, et al.
Publicado: (2021)

Photovoltaic Characteristics of GaSe/MoSe(2) Heterojunction Devices
por: Ishikawa, Ryousuke, et al.
Publicado: (2021)

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
por: Qian, Shi-Bing, et al.
Publicado: (2017)

Investigation of the Energy Band at the Molybdenum Disulfide and ZrO(2) Heterojunctions
por: Liu, Xinke, et al.
Publicado: (2018)

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition
por: Sun, Long, et al.
Publicado: (2017)

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
por: Sun, Tao, et al.
Publicado: (2020)

Nano-oxide thin films deposited via atomic layer deposition on microchannel plates
por: Yan, Baojun, et al.
Publicado: (2015)

Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer
por: Liu, Dan-Dan, et al.
Publicado: (2019)

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition
por: Zhai, Chen-Hui, et al.
Publicado: (2016)

Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
por: Shi, K, et al.
Publicado: (2010)

Investigation of bulk hybrid heterojunction solar cells based on Cu(In,Ga)Se(2) nanocrystals
por: Yen, Yu-Ting, et al.
Publicado: (2013)

Iridium wire grid polarizer fabricated using atomic layer deposition
por: Weber, Thomas, et al.
Publicado: (2011)

Atomic Layer Deposition of Pt Nanoparticles for Microengine with Promoted Catalytic Motion
por: Jiang, Chi, et al.
Publicado: (2016)

Atomic Layer Deposition of Buffer Layers for the Growth of Vertically Aligned Carbon Nanotube Arrays
por: Li, Hao-Hao, et al.
Publicado: (2019)

Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO(2)/Al(2)O(3 )gate stack: study of Ge auto-doping and p-type Zn doping
por: Dalapati, Goutam Kumar, et al.
Publicado: (2012)

Interfacial, Electrical, and Band Alignment Characteristics of HfO(2)/Ge Stacks with In Situ-Formed SiO(2) Interlayer by Plasma-Enhanced Atomic Layer Deposition
por: Cao, Yan-Qiang, et al.
Publicado: (2017)

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD
por: Chen, Yung-Sheng, et al.
Publicado: (2014)

The impact of thickness and thermal annealing on refractive index for aluminum oxide thin films deposited by atomic layer deposition
por: Wang, Zi-Yi, et al.
Publicado: (2015)

Improved characteristics of near-band-edge and deep-level emissions from ZnO nanorod arrays by atomic-layer-deposited Al(2)O(3 )and ZnO shell layers
por: Sun, Wen-Cheng, et al.
Publicado: (2011)

Density Functional Theory Study of Atomic Layer Deposition of Zinc Oxide on Graphene
por: Ali, Amgad Ahmed, et al.
Publicado: (2015)

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
por: Ma, Qian, et al.
Publicado: (2018)

High-Sensitivity and Long-Life Microchannel Plate Processed by Atomic Layer Deposition
por: Cao, Weiwei, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_cn7vsf1hcck8e1t6jmo5f2oocu