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Initial Growth Study of Atomic-Layer Deposition of Al(2)O(3) by Vibrational Sum-Frequency Generation

[Image: see text] The initial growth during the atomic-layer deposition (ALD) of Al(2)O(3) using trimethylaluminum (TMA) and water was studied on two starting surfaces: SiO(2) and −H-terminated Si(111) [H/Si(111)]. In situ spectroscopy ellipsometry (SE) showed virtually immediate growth of Al(2)O(3)...

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Detalles Bibliográficos
Autores principales: Vandalon, V., Kessels, W. M. M. Erwin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6694409/
https://www.ncbi.nlm.nih.gov/pubmed/31310143
http://dx.doi.org/10.1021/acs.langmuir.9b01600