Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States

A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operation exhibiting four-level resistances. Three key m...

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Detalles Bibliográficos
Autores principales: Choi, Jin-Young, Jun, Hansol, Ashiba, Kei, Baek, Jong-Ung, Shim, Tae-Hun, Park, Jea-Gun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695488/
https://www.ncbi.nlm.nih.gov/pubmed/31417114
http://dx.doi.org/10.1038/s41598-019-48311-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695488/
https://www.ncbi.nlm.nih.gov/pubmed/31417114
http://dx.doi.org/10.1038/s41598-019-48311-0

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