A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions

Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...

Descripción completa

Detalles Bibliográficos
Autores principales: Janipour, Mohsen, Misirlioglu, I. Burc, Sendur, Kursat
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695625/
https://www.ncbi.nlm.nih.gov/pubmed/31362342
http://dx.doi.org/10.3390/ma12152412

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695625/
https://www.ncbi.nlm.nih.gov/pubmed/31362342
http://dx.doi.org/10.3390/ma12152412

Ejemplares similares