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A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions
Semiconductor heterostructures are suitable for the design and fabrication of terahertz (THz) plasmonic devices, due to their matching carrier densities. The classical dispersion relations in the current literature are derived for metal plasmonic materials, such as gold and silver, for which a homog...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695625/ https://www.ncbi.nlm.nih.gov/pubmed/31362342 http://dx.doi.org/10.3390/ma12152412 |