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Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors
There is a growing demand in the semiconductor industry to integrate many functionalities on a single portable device. The integration of sensor fabrication with the mature CMOS technology has made this level of integration a reality. However, sensors still require calibration and optimization befor...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695634/ https://www.ncbi.nlm.nih.gov/pubmed/31357746 http://dx.doi.org/10.3390/ma12152410 |
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author | Filipovic, Lado Selberherr, Siegfried |
author_facet | Filipovic, Lado Selberherr, Siegfried |
author_sort | Filipovic, Lado |
collection | PubMed |
description | There is a growing demand in the semiconductor industry to integrate many functionalities on a single portable device. The integration of sensor fabrication with the mature CMOS technology has made this level of integration a reality. However, sensors still require calibration and optimization before full integration. For this, modeling and simulation is essential, since attempting new, innovative designs in a laboratory requires a long time and expensive tests. In this manuscript we address aspects for the modeling and simulation of semiconductor metal oxide gas sensors, devices which have the highest potential for integration because of their CMOS-friendly fabrication capability and low operating power. We analyze recent advancements using FEM models to simulate the thermo-electro-mechanical behavior of the sensors. These simulations are essentials to calibrate the design choices and ensure low operating power and improve reliability. The primary consumer of power is a microheater which is essential to heat the sensing film to appropriately high temperatures in order to initiate the sensing mechanism. Electro-thermal models to simulate its operation are presented here, using FEM and the Cauer network model. We show that the simpler Cauer model, which uses an electrical circuit to model the thermo-electrical behavior, can efficiently reproduce experimental observations. |
format | Online Article Text |
id | pubmed-6695634 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-66956342019-09-05 Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors Filipovic, Lado Selberherr, Siegfried Materials (Basel) Article There is a growing demand in the semiconductor industry to integrate many functionalities on a single portable device. The integration of sensor fabrication with the mature CMOS technology has made this level of integration a reality. However, sensors still require calibration and optimization before full integration. For this, modeling and simulation is essential, since attempting new, innovative designs in a laboratory requires a long time and expensive tests. In this manuscript we address aspects for the modeling and simulation of semiconductor metal oxide gas sensors, devices which have the highest potential for integration because of their CMOS-friendly fabrication capability and low operating power. We analyze recent advancements using FEM models to simulate the thermo-electro-mechanical behavior of the sensors. These simulations are essentials to calibrate the design choices and ensure low operating power and improve reliability. The primary consumer of power is a microheater which is essential to heat the sensing film to appropriately high temperatures in order to initiate the sensing mechanism. Electro-thermal models to simulate its operation are presented here, using FEM and the Cauer network model. We show that the simpler Cauer model, which uses an electrical circuit to model the thermo-electrical behavior, can efficiently reproduce experimental observations. MDPI 2019-07-28 /pmc/articles/PMC6695634/ /pubmed/31357746 http://dx.doi.org/10.3390/ma12152410 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Filipovic, Lado Selberherr, Siegfried Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors |
title | Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors |
title_full | Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors |
title_fullStr | Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors |
title_full_unstemmed | Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors |
title_short | Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors |
title_sort | thermo-electro-mechanical simulation of semiconductor metal oxide gas sensors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695634/ https://www.ncbi.nlm.nih.gov/pubmed/31357746 http://dx.doi.org/10.3390/ma12152410 |
work_keys_str_mv | AT filipoviclado thermoelectromechanicalsimulationofsemiconductormetaloxidegassensors AT selberherrsiegfried thermoelectromechanicalsimulationofsemiconductormetaloxidegassensors |