Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in GaN prepared via OMVPE on pseudo-bulk GaN wafers (in...

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Detalles Bibliográficos
Autores principales: Ciarkowski, Timothy, Allen, Noah, Carlson, Eric, McCarthy, Robert, Youtsey, Chris, Wang, Jingshan, Fay, Patrick, Xie, Jinqiao, Guido, Louis
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695831/
https://www.ncbi.nlm.nih.gov/pubmed/31374963
http://dx.doi.org/10.3390/ma12152455

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695831/
https://www.ncbi.nlm.nih.gov/pubmed/31374963
http://dx.doi.org/10.3390/ma12152455

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