A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs

An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effec...

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Detalles Bibliográficos
Autores principales: Seoane, Natalia, Nagy, Daniel, Indalecio, Guillermo, Espiñeira, Gabriel, Kalna, Karol, García-Loureiro, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695869/
https://www.ncbi.nlm.nih.gov/pubmed/31357496
http://dx.doi.org/10.3390/ma12152391

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695869/
https://www.ncbi.nlm.nih.gov/pubmed/31357496
http://dx.doi.org/10.3390/ma12152391

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