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A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been developed to characterise the performance, scalability, and variability of state-of-the-art semiconductor devices. To demonstrate capabilities of the toolbox, a 10 nm gate length Si gate-all-around field-effec...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695869/ https://www.ncbi.nlm.nih.gov/pubmed/31357496 http://dx.doi.org/10.3390/ma12152391 |