Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applica...

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Detalles Bibliográficos
Autores principales: Schöler, Michael, Brecht, Clemens, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695932/
https://www.ncbi.nlm.nih.gov/pubmed/31390722
http://dx.doi.org/10.3390/ma12152487

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695932/
https://www.ncbi.nlm.nih.gov/pubmed/31390722
http://dx.doi.org/10.3390/ma12152487

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