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Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applica...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6695932/ https://www.ncbi.nlm.nih.gov/pubmed/31390722 http://dx.doi.org/10.3390/ma12152487 |