Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE)....

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Detalles Bibliográficos
Autores principales: Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696193/
https://www.ncbi.nlm.nih.gov/pubmed/31344899
http://dx.doi.org/10.3390/ma12152353

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696193/
https://www.ncbi.nlm.nih.gov/pubmed/31344899
http://dx.doi.org/10.3390/ma12152353

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