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Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE)....

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Detalles Bibliográficos
Autores principales: Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696193/
https://www.ncbi.nlm.nih.gov/pubmed/31344899
http://dx.doi.org/10.3390/ma12152353
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author Schuh, Philipp
Steiner, Johannes
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
author_facet Schuh, Philipp
Steiner, Johannes
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
author_sort Schuh, Philipp
collection PubMed
description The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).
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spelling pubmed-66961932019-09-05 Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. Materials (Basel) Article The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species). MDPI 2019-07-24 /pmc/articles/PMC6696193/ /pubmed/31344899 http://dx.doi.org/10.3390/ma12152353 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Schuh, Philipp
Steiner, Johannes
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
title Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
title_full Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
title_fullStr Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
title_full_unstemmed Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
title_short Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
title_sort limitations during vapor phase growth of bulk (100) 3c-sic using 3c-sic-on-sic seeding stacks
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6696193/
https://www.ncbi.nlm.nih.gov/pubmed/31344899
http://dx.doi.org/10.3390/ma12152353
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