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Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we r...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6700285/ https://www.ncbi.nlm.nih.gov/pubmed/31427668 http://dx.doi.org/10.1038/s41598-019-48552-z |