A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only ar...

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Detalles Bibliográficos
Autores principales: Chen, Ying-Chen, Lin, Chao-Cheng, Hu, Szu-Tung, Lin, Chih-Yang, Fowler, Burt, Lee, Jack
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711989/
https://www.ncbi.nlm.nih.gov/pubmed/31455881
http://dx.doi.org/10.1038/s41598-019-48932-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711989/
https://www.ncbi.nlm.nih.gov/pubmed/31455881
http://dx.doi.org/10.1038/s41598-019-48932-5

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