A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application

Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only ar...

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Autores principales: Chen, Ying-Chen, Lin, Chao-Cheng, Hu, Szu-Tung, Lin, Chih-Yang, Fowler, Burt, Lee, Jack
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711989/
https://www.ncbi.nlm.nih.gov/pubmed/31455881
http://dx.doi.org/10.1038/s41598-019-48932-5
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author Chen, Ying-Chen
Lin, Chao-Cheng
Hu, Szu-Tung
Lin, Chih-Yang
Fowler, Burt
Lee, Jack
author_facet Chen, Ying-Chen
Lin, Chao-Cheng
Hu, Szu-Tung
Lin, Chih-Yang
Fowler, Burt
Lee, Jack
author_sort Chen, Ying-Chen
collection PubMed
description Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.
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spelling pubmed-67119892019-09-13 A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application Chen, Ying-Chen Lin, Chao-Cheng Hu, Szu-Tung Lin, Chih-Yang Fowler, Burt Lee, Jack Sci Rep Article Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications. Nature Publishing Group UK 2019-08-27 /pmc/articles/PMC6711989/ /pubmed/31455881 http://dx.doi.org/10.1038/s41598-019-48932-5 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Chen, Ying-Chen
Lin, Chao-Cheng
Hu, Szu-Tung
Lin, Chih-Yang
Fowler, Burt
Lee, Jack
A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
title A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
title_full A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
title_fullStr A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
title_full_unstemmed A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
title_short A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
title_sort novel resistive switching identification method through relaxation characteristics for sneak-path-constrained selectorless rram application
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711989/
https://www.ncbi.nlm.nih.gov/pubmed/31455881
http://dx.doi.org/10.1038/s41598-019-48932-5
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