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A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application
Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only ar...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6711989/ https://www.ncbi.nlm.nih.gov/pubmed/31455881 http://dx.doi.org/10.1038/s41598-019-48932-5 |