Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densifica...

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Detalles Bibliográficos
Autores principales: Arzig, Matthias, Steiner, Johannes, Salamon, Michael, Uhlmann, Norman, Wellmann, Peter J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6719110/
https://www.ncbi.nlm.nih.gov/pubmed/31416280
http://dx.doi.org/10.3390/ma12162591

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6719110/
https://www.ncbi.nlm.nih.gov/pubmed/31416280
http://dx.doi.org/10.3390/ma12162591

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