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Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densifica...

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Detalles Bibliográficos
Autores principales:	Arzig, Matthias, Steiner, Johannes, Salamon, Michael, Uhlmann, Norman, Wellmann, Peter J.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6719110/ https://www.ncbi.nlm.nih.gov/pubmed/31416280 http://dx.doi.org/10.3390/ma12162591

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