Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicula...

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Detalles Bibliográficos
Autores principales: Sarzyński, Marcin, Grzanka, Ewa, Grzanka, Szymon, Targowski, Grzegorz, Czernecki, Robert, Reszka, Anna, Holy, Vaclav, Nitta, Shugo, Liu, Zhibin, Amano, Hiroshi, Leszczyński, Mike
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6719245/
https://www.ncbi.nlm.nih.gov/pubmed/31416124
http://dx.doi.org/10.3390/ma12162583

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6719245/
https://www.ncbi.nlm.nih.gov/pubmed/31416124
http://dx.doi.org/10.3390/ma12162583

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