The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation...

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Detalles Bibliográficos
Autores principales: Zhao, Xiaohong, Lu, Hongliang, Zhao, Manli, Zhang, Yuming, Zhang, Yimen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6722908/
https://www.ncbi.nlm.nih.gov/pubmed/31395830
http://dx.doi.org/10.3390/nano9081141

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6722908/
https://www.ncbi.nlm.nih.gov/pubmed/31395830
http://dx.doi.org/10.3390/nano9081141

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