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The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6722908/ https://www.ncbi.nlm.nih.gov/pubmed/31395830 http://dx.doi.org/10.3390/nano9081141 |