High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift...

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Detalles Bibliográficos
Autores principales: Zhao, Qiang, Miao, Jiahao, Zhou, Shengjun, Gui, Chengqun, Tang, Bin, Liu, Mengling, Wan, Hui, Hu, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6724084/
https://www.ncbi.nlm.nih.gov/pubmed/31426467
http://dx.doi.org/10.3390/nano9081178

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6724084/
https://www.ncbi.nlm.nih.gov/pubmed/31426467
http://dx.doi.org/10.3390/nano9081178

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