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High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift...

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Detalles Bibliográficos
Autores principales: Zhao, Qiang, Miao, Jiahao, Zhou, Shengjun, Gui, Chengqun, Tang, Bin, Liu, Mengling, Wan, Hui, Hu, Jinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6724084/
https://www.ncbi.nlm.nih.gov/pubmed/31426467
http://dx.doi.org/10.3390/nano9081178
_version_ 1783448922036895744
author Zhao, Qiang
Miao, Jiahao
Zhou, Shengjun
Gui, Chengqun
Tang, Bin
Liu, Mengling
Wan, Hui
Hu, Jinfeng
author_facet Zhao, Qiang
Miao, Jiahao
Zhou, Shengjun
Gui, Chengqun
Tang, Bin
Liu, Mengling
Wan, Hui
Hu, Jinfeng
author_sort Zhao, Qiang
collection PubMed
description We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.
format Online
Article
Text
id pubmed-6724084
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-67240842019-09-10 High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate Zhao, Qiang Miao, Jiahao Zhou, Shengjun Gui, Chengqun Tang, Bin Liu, Mengling Wan, Hui Hu, Jinfeng Nanomaterials (Basel) Article We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED. MDPI 2019-08-17 /pmc/articles/PMC6724084/ /pubmed/31426467 http://dx.doi.org/10.3390/nano9081178 Text en © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhao, Qiang
Miao, Jiahao
Zhou, Shengjun
Gui, Chengqun
Tang, Bin
Liu, Mengling
Wan, Hui
Hu, Jinfeng
High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
title High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
title_full High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
title_fullStr High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
title_full_unstemmed High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
title_short High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate
title_sort high-power gan-based vertical light-emitting diodes on 4-inch silicon substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6724084/
https://www.ncbi.nlm.nih.gov/pubmed/31426467
http://dx.doi.org/10.3390/nano9081178
work_keys_str_mv AT zhaoqiang highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT miaojiahao highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT zhoushengjun highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT guichengqun highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT tangbin highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT liumengling highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT wanhui highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate
AT hujinfeng highpowerganbasedverticallightemittingdiodeson4inchsiliconsubstrate