Improvement of the Bias Stress Stability in 2D MoS(2) and WS(2) Transistors with a TiO(2) Interfacial Layer

The fermi-level pinning phenomenon, which occurs at the metal–semiconductor interface, not only obstructs the achievement of high-performance field effect transistors (FETs) but also results in poor long-term stability. This paper reports on the improvement in gate-bias stress stability in two-dimen...

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Detalles Bibliográficos
Autores principales: Park, Woojin, Pak, Yusin, Jang, Hye Yeon, Nam, Jae Hyeon, Kim, Tae Hyeon, Oh, Seyoung, Choi, Sung Mook, Kim, Yonghun, Cho, Byungjin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6724147/
https://www.ncbi.nlm.nih.gov/pubmed/31409001
http://dx.doi.org/10.3390/nano9081155

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6724147/
https://www.ncbi.nlm.nih.gov/pubmed/31409001
http://dx.doi.org/10.3390/nano9081155

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