Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP(3) Monolayer from Ab Initio Studies

Using first-principle calculations within density functional theory, we investigate the electronic property and stability of substitutionally doped 2D GeP(3) monolayer with dopants from group III to VI. The conducting properties are found to be dramatically modified by both the doping sites and the...

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Detalles Bibliográficos
Autores principales: Zhang, Suihao, Li, Rui, Fu, Xiaonan, Zhao, Yu, Niu, Chunyao, Li, Chong, Zeng, Zaiping, Wang, Songyou, Xia, Congxin, Jia, Yu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6733945/
https://www.ncbi.nlm.nih.gov/pubmed/31502083
http://dx.doi.org/10.1186/s11671-019-3135-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6733945/
https://www.ncbi.nlm.nih.gov/pubmed/31502083
http://dx.doi.org/10.1186/s11671-019-3135-3

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