Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

[Image: see text] The use of a 10-nm-thick buffer layer enabled tailoring of the characteristics, such as film deposition and structural and electrical properties, of magnetron-sputtered Al-doped ZnO (AZO) films containing unintentionally retained Ar atoms. The AZO films were deposited on glass subs...

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Detalles Bibliográficos
Autores principales: Nomoto, Junichi, Makino, Hisao, Nakajima, Tomohiko, Tsuchiya, Tetsuo, Yamamoto, Tetsuya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2019
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6740179/
https://www.ncbi.nlm.nih.gov/pubmed/31528807
http://dx.doi.org/10.1021/acsomega.9b01761

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6740179/
https://www.ncbi.nlm.nih.gov/pubmed/31528807
http://dx.doi.org/10.1021/acsomega.9b01761

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