Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most stu...

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Detalles Bibliográficos
Autores principales: Yin, Lei, He, Peng, Cheng, Ruiqing, Wang, Feng, Wang, Fengmei, Wang, Zhenxing, Wen, Yao, He, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6742650/
https://www.ncbi.nlm.nih.gov/pubmed/31515481
http://dx.doi.org/10.1038/s41467-019-12200-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6742650/
https://www.ncbi.nlm.nih.gov/pubmed/31515481
http://dx.doi.org/10.1038/s41467-019-12200-x

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